PRN: Complete Teardown Analysis of Panasonic's PGA26C09DV 600V GaN HEMT with Comparison with GaN Systems' GS66504B and Transphorm's GaN HEMT - Research and Markets

16/mar/2017 19.30.13 PR Newswire Turismo Contatta l'autore

Complete Teardown Analysis of Panasonic's PGA26C09DV 600V GaN HEMT with Comparison with GaN Systems' GS66504B and Transphorm's GaN HEMT - Research and Markets

 
[16-March-2017]
 

DUBLIN, Mar 16, 2017 /PRNewswire/ --

Research and Markets has announced the addition of the "Panasonic PGA26C09DV 600V GaN HEMT: Complete Teardown Analysis" report to their offering.

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Panasonic's PGA26C09DV features a medium-voltage breakdown of 600V for a current of 15A (25°C), with very low RdsOn compared to its competitors. The transistor is optimized for AC-DC power supply, photovoltaic, and motor inverters.

The GaN and AlGaN layers are deposited by epitaxy on a silicon substrate. A complex buffer and template layer structure is used to reduce stress and dislocation. This is complemented by a thick superlattice structure clearly visible in the TEM analysis.

Based on a complete teardown analysis, this report also provides a production cost estimate for the epitaxy, HEMT, and package.

Moreover, this report offers a comparison with GaN Systems' GS66504B and Transphorm's GaN HEMT, highlighting the huge differences in design and manufacturing process and their impact on device size and production cost.


Key Topics Covered:

Overview / Introduction

- Executive summary
- Reverse costing methodology

Company Profile

- Panasonic

Physical Analysis

- Synthesis of the physical analysis
- Package analysis
- Package opening
- Package cross-section

HEMT Die

- HEMT die view & dimensions
- HEMT die process
- HEMT die cross-section
- TEM epitaxy  analysis
- HEMT die process characteristics

HEMT Manufacturing Process

- HEMT die front-end process
- HEMT die fabrication unit
- Final test & packaging fabrication unit

Cost Analysis

- Synthesis of the cost analysis
- Yield explanations and hypotheses
- HEMT die
- HEMT die front-end cost
- HEMT die probe test, thinning, and dicing
- HEMT die wafer cost
- HEMT die cost
- Wafer cost evolution
- Die cost evolution

Complete HEMT

- Assembly cost
- Synthesis of the assembly
- Component cost

Price Analysis

Estimated sales price

Comparison

- Comparison between Transphorm and GaN Systems' HEMT

Company Services

For more information about this report visit http://www.researchandmarkets.com/research/p7pk4n/panasonic


Media Contact:


Research and Markets
Laura Wood, Senior Manager
press@researchandmarkets.com

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